手机彩票网,计划网址彩票平台,365bet体育网址,华体会手机版app信誉好,金沙app下载,ob欧宝全站官方网站,极速快三

Your Position: Home > Support > Service Center

Microsoft joined a new generation of DRAM groups of HMCC reason

2012/8/16??????view:

  In May 8, 2012, promote the use of TSV ( TSV ) 3D laminated to a new generation of DRAM " Hybrid Memory Cube ( HMC ) Hybrid Memory Cube Consortium " popularity ( HMCC ) announced that the United States, software giant Microsoft has joined the association.

  HMC is the three-dimensional structure, the logic chip along the vertical direction superposition of multiple DRAM chips, and then through the TSV connection wiring technology. HMC 's biggest characteristic is compared with existing DRAM, performance can be greatly improved. The reasons there are two, one is between chips from semiconductor package wiring distance on a board on the traditional methods of " cm " units are substantially reduced to dozens ofμ m~ 1mm; two is on a chip to form 1000 to tens of thousands of TSV, realize the multipoint connection chip.

  Microsoft 's accession to the HMCC, because we are considering how to corresponding is likely to become a personal computer and a computer to improving the performance of " memory bottleneck " problem. Memory bottleneck refers to as the microprocessor performance through multiple nucleation and constantly improve, the architecture of the DRAM performance will not be able to meet the need of processor. If do not solve this problem, can occur even if the computer new product, the actual performance is also not appropriate promotion situation. Compared with it, if the TSV based on the application of HMC in computer main memory, the data transmission speed can be increased to the current DRAM is about 15 times, therefore, is not just a giant Microsoft, American companies such as Intel are also active in research using HMC.

  In fact, plans to use TSV not only for HMC and other DRAM products. According to the semiconductor manufacturers plan, in the next few years, borne from electronic equipment input function of the CMOS sensor to the responsible for the operations of FPGA and multi core processor, and in charge of product storage of DRAM and NAND flash will have to import TSV. If the plan goes ahead, TSV will assume the input, operation, storage and other electronic equipment main function.

商城县| 淮北市| 信宜市| 吉林省| 讷河市| 苏尼特左旗| 子长县| 清流县| 樟树市| 乐昌市| 镇平县| 丰原市| 论坛| 沁水县| 白沙| 陆良县| 通化市| 沅陵县| 麦盖提县| 井陉县| 永平县| 兴隆县| 平泉县| 桂平市| 水城县| 乐平市| 连平县| 昔阳县| 白河县| 通山县| 特克斯县| 尼勒克县| 新津县| 平湖市| 蒙阴县| 甘孜县| 杭锦旗| 黔东| 潢川县| 长宁县| 大冶市|